2N6109 Datasheet

The 2N6109 is a PNP Power Transistors.

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Part Number2N6109
Manufactureronsemi
Overview . .
Part Number2N6109
DescriptionPNP Transistor
ManufacturerInchange Semiconductor
Overview ·DC Current Gain- : hFE = 30-150@ IC= -2.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -50V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATI. L CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -7A; IB= -3A VBE(on) Base-Emitter On Voltage ICEX Collector Cutoff Current ICEO Collector Cutoff.
Part Number2N6109
DescriptionPNP PLASTIC POWER TRANSISTOR
ManufacturerContinental Device India
Overview Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package 2N6109 2N6109 PNP PLASTIC POWER TRANSISTOR General Purpose Amplifier and Switching A. .
Part Number2N6109
DescriptionCOMPLEMENTARY SILICON POWER TRANSISTORS
ManufacturerCentral Semiconductor
Overview The CENTRAL SEMICONDUCTOR 2N6107, 2N6288 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed for general purpose power amplifier and switchi. .