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MJ11032 - Silicon NPN Transistor

General Description

The MJ11032 (NPN) and MJ11033 (PNP) are silicon complementary Darlington transistors in a TO

3 type package designed for use as output devices in general purpose amplifier applications.

Key Features

  • D High Gain Darlington Performance D High DC Current Gain: hFE = 1000 (Min) @ IC = 25A hFE = 400 (Min) @ IC = 50A D Monolithic Construction w/Built.
  • In Base.
  • Emitter Shunt Resistor Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . 120V Collector.
  • Base Voltage, VCB.
  • .

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Datasheet Details

Part number MJ11032
Manufacturer NTE Electronics (defunct)
File Size 66.20 KB
Description Silicon NPN Transistor
Datasheet download datasheet MJ11032 Datasheet

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Other Datasheets by NTE Electronics (defunct)

Part Number Description
MJ11033 Silicon PNP Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MJ11032 (NPN) & MJ11033 (PNP) Silicon Darlington Transistors High Current, General Purpose TO−3 Type Package Description: The MJ11032 (NPN) and MJ11033 (PNP) are silicon complementary Darlington transistors in a TO−3 type package designed for use as output devices in general purpose amplifier applications. Features: D High Gain Darlington Performance D High DC Current Gain: hFE = 1000 (Min) @ IC = 25A hFE = 400 (Min) @ IC = 50A D Monolithic Construction w/Built−In Base−Emitter Shunt Resistor Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .