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MJ11033 - Silicon PNP Transistor

Download the MJ11033 datasheet PDF. This datasheet also covers the MJ11032 variant, as both devices belong to the same silicon pnp transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The MJ11032 (NPN) and MJ11033 (PNP) are silicon complementary Darlington transistors in a TO

3 type package designed for use as output devices in general purpose amplifier applications.

Key Features

  • D High Gain Darlington Performance D High DC Current Gain: hFE = 1000 (Min) @ IC = 25A hFE = 400 (Min) @ IC = 50A D Monolithic Construction w/Built.
  • In Base.
  • Emitter Shunt Resistor Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . 120V Collector.
  • Base Voltage, VCB.
  • .

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MJ11032-NTE.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MJ11033
Manufacturer NTE Electronics (defunct)
File Size 66.20 KB
Description Silicon PNP Transistor
Datasheet download datasheet MJ11033 Datasheet

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Other Datasheets by NTE Electronics (defunct)

Part Number Description
MJ11032 Silicon NPN Transistor
MJ11028 Silicon Darlington NPN Transistor
MJ10001 Silicon NPN Transistor
MJ10004 Silicon NPN Transistor
MJ10007 Silicon NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MJ11032 (NPN) & MJ11033 (PNP) Silicon Darlington Transistors High Current, General Purpose TO−3 Type Package Description: The MJ11032 (NPN) and MJ11033 (PNP) are silicon complementary Darlington transistors in a TO−3 type package designed for use as output devices in general purpose amplifier applications. Features: D High Gain Darlington Performance D High DC Current Gain: hFE = 1000 (Min) @ IC = 25A hFE = 400 (Min) @ IC = 50A D Monolithic Construction w/Built−In Base−Emitter Shunt Resistor Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .