Download the MJE4353 datasheet PDF.
This datasheet also covers the MJE4343 variant, as both devices belong to the same silicon pnp transistor family and are provided as variant models within a single manufacturer datasheet.
General Description
The MJE4343 (NPN) and MJE4353 (PNP) are silicon complementary transistors in a TO
3PN type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits.
Key Features
D High Collector.
Emitter Sustaining Voltage: VCEO(sus) = 160V D High DC Current Gain: hFE = 35 Typ @ IC = 8A D Low Collector.
Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 8A
Absolute Maximum Ratings:
Collector.
Full PDF Text Transcription for MJE4353 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MJE4353. For precise diagrams, and layout, please refer to the original PDF.
MJE4343 (NPN) & MJE4353 (PNP) Silicon Complementary Transistors High Voltage Power Amplifier TO−3PN Type Package Description: The MJE4343 (NPN) and MJE4353 (PNP) are sili...
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Type Package Description: The MJE4343 (NPN) and MJE4353 (PNP) are silicon complementary transistors in a TO−3PN type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits. Features: D High Collector−Emitter Sustaining Voltage: VCEO(sus) = 160V D High DC Current Gain: hFE = 35 Typ @ IC = 8A D Low Collector−Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 8A Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V Collector−Base Voltage, VCB . . . . .
MJE4353 Datasheet
