Datasheet4U Logo Datasheet4U.com

MJE4353 - Silicon PNP Transistor

This page provides the datasheet information for the MJE4353, a member of the MJE4343 Silicon PNP Transistor family.

Description

The MJE4343 (NPN) and MJE4353 (PNP) are silicon complementary transistors in a TO

3PN type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits.

Features

  • D High Collector.
  • Emitter Sustaining Voltage: VCEO(sus) = 160V D High DC Current Gain: hFE = 35 Typ @ IC = 8A D Low Collector.
  • Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 8A Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . 160V Collector.
  • Base Voltage, VCB.

📥 Download Datasheet

Datasheet preview – MJE4353

Datasheet Details

Part number MJE4353
Manufacturer NTE
File Size 61.00 KB
Description Silicon PNP Transistor
Datasheet download datasheet MJE4353 Datasheet
Additional preview pages of the MJE4353 datasheet.

📁 Similar Datasheet

  • MJE4353 - PNP Transistor (ON Semiconductor)
  • MJE4353 - Silicon PNP Power Transistor (INCHANGE)
  • MJE4353 - 16 AMPERE POWER TRANSISTORS (Motorola)
  • MJE4353 - (MJE4350 - MJE4353) SILICON POWER TRANSISTOR (SavantIC)
  • MJE4350 - PNP Transistor (INCHANGE)
  • MJE4350 - (MJE4350 - MJE4353) SILICON POWER TRANSISTOR (SavantIC)
  • MJE4351 - (MJE4350 - MJE4353) SILICON POWER TRANSISTOR (SavantIC)
  • MJE4351 - PNP Transistor (INCHANGE)
  • MJE4352 - 16 AMPERE POWER TRANSISTORS (Motorola)
  • MJE4352 - (MJE4350 - MJE4353) SILICON POWER TRANSISTOR (SavantIC)
Other Datasheets by NTE

Full PDF Text Transcription

Click to expand full text
MJE4343 (NPN) & MJE4353 (PNP) Silicon Complementary Transistors High Voltage Power Amplifier TO−3PN Type Package Description: The MJE4343 (NPN) and MJE4353 (PNP) are silicon complementary transistors in a TO−3PN type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits. Features: D High Collector−Emitter Sustaining Voltage: VCEO(sus) = 160V D High DC Current Gain: hFE = 35 Typ @ IC = 8A D Low Collector−Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 8A Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Published: |