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MJE4353 Datasheet

The MJE4353 is a Silicon PNP Transistor. Download the datasheet PDF and view key features and specifications below.

Part NumberMJE4353
ManufacturerNTE Electronics
Overview The MJE4343 (NPN) and MJE4353 (PNP) are silicon complementary transistors in a TO−3PN type package designed for use in high power audio amplifier applications and high voltage switching regulator cir. D High Collector−Emitter Sustaining Voltage: VCEO(sus) = 160V D High DC Current Gain: hFE = 35 Typ @ IC = 8A D Low Collector−Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 8A Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
Part NumberMJE4353
DescriptionSilicon PNP Power Transistor
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -160V(Min) ·DC current gain - : hFE = 15 (Min) @IC= -8 A : hFE = 8 (Min) @IC= -16A ·Complement to Type MJE4343 ·Minimum Lot-to-Lot variations for ro. Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -100mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -8A ;IB= -0.8A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -16A ;IB= -2A VBE(sat) Base-Emitter Saturation .
Part NumberMJE4353
DescriptionPNP Transistor
Manufactureronsemi
Overview MJE4343 (NPN), MJE4353 (PNP) High-Voltage - High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. Features • High Col.
* High Collector−Emitter Sustaining Voltage − NPN PNP VCEO(sus) = 160 Vdc − MJE4343 MJE4353
* High DC Current Gain − @ IC = 8.0 Adc hFE = 35 (Typ)
* Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 8.0 Adc
* These are Pb−Free Devices MAXIMUM RATINGS Rating Symbol Max C.
Part NumberMJE4353
Description16 AMPERE POWER TRANSISTORS
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE4342/D High-Voltage Ċ High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switc. ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ.

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