NTE129 Overview
Description
The NTE128 (NPN) and NTE129 (PNP) are silicon complementary transistors in a TO39 type package designed primarily for amplifier and switching applications. These devices features high breakdown voltages, low leakage currents, low capacity, and a beta useful over an extremely wide current range.
Key Features
- high breakdown voltages, low leakage currents, low capacity, and a beta useful over an extremely wide current range
