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NTE189 - Silicon Complementary Transistors

Description

The NTE188 (NPN) and NTE189 (PNP) are complementary silicon transistors in a T O202N type package designed for general purpose, high voltage amplifier and driver applications.

Features

  • D High Collector.
  • Emitter Breakdown Voltage: V(BR)CEO = 80V @ IC = 1mA D High Power Dissipation: PD = 10W @ TC = +25°C Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . . 80V Collector.
  • Base Voiltage, VCB.
  • . 80V Emitter.
  • Base Voltage, VEB.

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Datasheet Details

Part number NTE189
Manufacturer NTE Electronics (defunct)
File Size 150.65 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE189 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTE188 (NPN) & NTE189 (PNP) Silicon Complementary Transistors High Voltage Amplifier & Driver Description: The NTE188 (NPN) and NTE189 (PNP) are complementary silicon transistors in a T O202N type package designed for general purpose, high voltage amplifier and driver applications. Features: D High Collector−Emitter Breakdown Voltage: V(BR)CEO = 80V @ IC = 1mA D High Power Dissipation: PD = 10W @ TC = +25°C Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector−Base Voiltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . .
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