NTE189 Overview
Key Specifications
Package: SIP
Mount Type: Through Hole
Pins: 5
Description
The NTE188 (NPN) and NTE189 (PNP) are complementary silicon transistors in a T O202N type package designed for general purpose, high voltage amplifier and driver applications. Features: D High Collector-Emitter Breakdown Voltage: V(BR)CEO = 80V @ IC = 1mA D High Power Dissipation: PD = 10W @ TC = +25°C.
Key Features
- D High Collector-Emitter Breakdown Voltage: V(BR)CEO = 80V @ IC = 1mA D High Power Dissipation: PD = 10W @ TC = +25°C
