NTE218 Description
The NTE218 is ideal for use as a driver, switch and medium power amplifier applications.
NTE218 Key Features
- 0.6VCE(sat) @ IC = 1A D High Gain Characteristics
- hFE @ IC = 250mA: 30-100 D Excellent Safe Area Limits
- Part: NTE218
- Manufacturer: NTE Electronics
- Size: 23.59 KB
Related NTE Electronics Datasheets
| Part Number | Description |
|---|---|
| NTE21 | Silicon Complementary Transistors |
| NTE210 | Silicon Complementary Transistors |
| NTE2102 | Integrated Circuit NMOS / 1K Static RAM |
| NTE211 | Silicon Complementary Transistors |
| NTE21128 | Integrated Circuit NMOS / 128K (16K x 8) UV EPROM |