Datasheet4U Logo Datasheet4U.com

NTE219 - Silicon Power Transistor

Download the NTE219 datasheet PDF. This datasheet also covers the NTE130 variant, as both devices belong to the same silicon power transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The NTE130 (NPN) and NTE219 (PNP) are silicon complementary transistors in a TO3 type case designed for general purpose switching and amplifier applications.

Features

  • D DC Current Gain: hFE = 20.
  • 70 @ IC = 4A D Collector.
  • Emitter Saturation Voltage: VCE(sat) = 1.1V (Max) @ IC = 4A D Excellent Safe Operating Area Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . . 60V Collector.
  • Emitter Voltage, VCER.
  • . . . . 70V Collector.
  • Base Vo.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NTE130_NTEElectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NTE219
Manufacturer NTE Electronics (defunct)
File Size 24.88 KB
Description Silicon Power Transistor
Datasheet download datasheet NTE219 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NTE214 (NTE74xx) Transistor Logic NTE Electronics
NTE2000 (NTExxxx) Linear Integrated Circuits NTE Electronics
NTE2001 (NTExxxx) Linear Integrated Circuits NTE Electronics
NTE2003 (NTExxxx) Linear Integrated Circuits NTE Electronics
NTE2004 (NTExxxx) Linear Integrated Circuits NTE Electronics

Other Datasheets by NTE Electronics (defunct)

Part Number Description
NTE21 Silicon Complementary Transistors
NTE210 Silicon Complementary Transistors
NTE2102 Integrated Circuit NMOS / 1K Static RAM
NTE211 Silicon Complementary Transistors
NTE21128 Integrated Circuit NMOS / 128K (16K x 8) UV EPROM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NTE130 (NPN) & NTE219 (PNP) Silicon Power Transistor Audio Power Amp, Medium Speed Switch Description: The NTE130 (NPN) and NTE219 (PNP) are silicon complementary transistors in a TO3 type case designed for general purpose switching and amplifier applications. Features: D DC Current Gain: hFE = 20 – 70 @ IC = 4A D Collector–Emitter Saturation Voltage: VCE(sat) = 1.1V (Max) @ IC = 4A D Excellent Safe Operating Area Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector–Emitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . .
Published: |