NTE236 Overview
Key Specifications
Mount Type: Through Hole
Pins: 3
Max Operating Temp: 150 °C
Min Operating Temp: -55 °C
Description
The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 12dB (VCC = 12V, PO = 16W, f = 27MHz) D Ability to Withstand Infinite VSWR Load when Operated at: VCC = 16V, PO = 20W, f = 27MHz Application: D 10 to 14 Watt Output Power Class AB Amplifier Applications in HF band Electrical Characterist.
