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NTE236 - Silicon NPN Transistor

Description

The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications.

Features

  • D High Power Gain: Gpe ≥ 12dB (VCC = 12V, PO = 16W, f = 27MHz) D Ability to Withstand Infinite VSWR Load when Operated at: VCC = 16V, PO = 20W, f = 27MHz.

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Datasheet Details

Part number NTE236
Manufacturer NTE Electronics (defunct)
File Size 21.92 KB
Description Silicon NPN Transistor
Datasheet download datasheet NTE236 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTE236 Silicon NPN Transistor Final RF Power Output (PO = 16W, 27MHz, SSB) Description: The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 12dB (VCC = 12V, PO = 16W, f = 27MHz) D Ability to Withstand Infinite VSWR Load when Operated at: VCC = 16V, PO = 20W, f = 27MHz Application: D 10 to 14 Watt Output Power Class AB Amplifier Applications in HF band Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector–Emitter Voltage (RBE = ∞), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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