NTE2365
NTE2365 is Silicon NPN Transistor manufactured by NTE Electronics.
Features
: D High Speed: tf = 100ns typ D High Reliability D High Breakdown Voltage: VCBO = 1500V Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector to Base Voltage, VCBO
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- - . . 1500V Collector to Emitter Voltage, VCEO
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- - . 800V Emitter to Base Voltage, VEBO
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- . 6V Collector Current, IC Continuous
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- . 12A Peak
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- - . 30A Collector Dissipation, PC
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- . . . 180W Junction Temperature, TJ
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