Datasheet4U Logo Datasheet4U.com

NTE2381 - Complementary Silicon Gate MOSFETs

Download the NTE2381 datasheet PDF. This datasheet also covers the NTE2380 variant, as both devices belong to the same complementary silicon gate mosfets family and are provided as variant models within a single manufacturer datasheet.

Description

The NTE2380 (N Ch) and NTE2381 (P

Ch) are complementary TMOS power FETs in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers.

Features

  • D Silicon Gate for Fast Switching Speeds D Rugged.
  • SOA is Power Dissipation Limited D Source.
  • to.
  • Drain Diode Characterized for Use With Inductive Loads Absolute Maximim Ratings: Drain.
  • Source Voltage, VDSS.
  • . 500V Drain.
  • Gate Voltage (RGS = 1MΩ), VDGR.
  • 500V Gate.
  • Source Volta.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NTE2380_NTEElectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NTE2381
Manufacturer NTE Electronics (defunct)
File Size 29.59 KB
Description Complementary Silicon Gate MOSFETs
Datasheet download datasheet NTE2381 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NTE2393 N-Channel MOSFET INCHANGE
NTE2000 (NTExxxx) Linear Integrated Circuits NTE Electronics
NTE2001 (NTExxxx) Linear Integrated Circuits NTE Electronics
NTE2003 (NTExxxx) Linear Integrated Circuits NTE Electronics
NTE2004 (NTExxxx) Linear Integrated Circuits NTE Electronics

Other Datasheets by NTE Electronics (defunct)

Part Number Description
NTE238 Silicon NPN Transistor
NTE2380 Complementary Silicon Gate MOSFET
NTE2382 N-CHANNEL MOSFET
NTE2383 P-CHANNEL MOSFET
NTE2384 N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NTE2380 (N–Ch) & NTE2381 (P–Ch) Complementary Silicon Gate MOSFETs Enhancement Mode, High Speed Switch Description: The NTE2380 (N–Ch) and NTE2381 (P–Ch) are complementary TMOS power FETs in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers. Features: D Silicon Gate for Fast Switching Speeds D Rugged – SOA is Power Dissipation Limited D Source–to–Drain Diode Characterized for Use With Inductive Loads Absolute Maximim Ratings: Drain–Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Drain–Gate Voltage (RGS = 1MΩ), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Published: |