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NTE2392 - N-CHANNEL MOSFET

General Description

The NTE2392 is an N

Channel Enhancement Mode Power MOS Field Effect Transistor.

Easy drive and very fast switching times make this device ideal for high speed switching applications.

Key Features

  • D Fast Switching D Low Drive Current D Ease of Paralleling D No Second Breakdown D Excellent Temperature Stability Absolute Maximum Ratings: Drain.
  • Source Voltage (Note 1), VDS.
  • . . . . 100V Drain.
  • Gate Voltage (RGS = 20kΩ, Note 1), VDGR.
  • . . . 100V Gate.
  • Source Voltage, VGS.

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Datasheet Details

Part number NTE2392
Manufacturer NTE Electronics (defunct)
File Size 27.28 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet NTE2392 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTE2392 MOSFET N–Channel Enhancement Mode, High Speed Switch Description: The NTE2392 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical applications include switching mode power supplies, uninterruptible power supplies, and motor speed control. Features: D Fast Switching D Low Drive Current D Ease of Paralleling D No Second Breakdown D Excellent Temperature Stability Absolute Maximum Ratings: Drain–Source Voltage (Note 1), VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Drain–Gate Voltage (RGS = 20kΩ, Note 1), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .