NTE27 Overview
Key Specifications
Package: TO-66
Mount Type: Through Hole
Pins: 2
Description
The NTE27 is a PNP germanium power transistor designed for high current applications requiring high–gain and low saturation voltages. Parameter OFF Characteristics Collector–Emitter Breakdown Voltage Collector–Emitter Breakdown Voltage Floating Potential Collector Cutoff Current V(BR)CEO IC = 1A, IB = 0, Note 1 V(BR)CES IC = 300mA, VBE = 0 VEBF ICEX ICBO Emitter Cutoff Current IEBO VCB = 60V, IE = 0 VCE = 45V, VBE(off) = 2V.
