Datasheet4U Logo Datasheet4U.com

NTE271 - Silicon Complementary Transistors

This page provides the datasheet information for the NTE271, a member of the NTE270 Silicon Complementary Transistors family.

Description

The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications.

Features

  • D High DC Current Gain: hFE = 1000 Min @ IC = 5A, VCE = 4V D Collector.
  • Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 30mA D Monolithic Construction with Built.
  • In Base.
  • Emitter Shunt Resistor Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . 100V Collector.
  • Base Voltage, VCB.

📥 Download Datasheet

Datasheet preview – NTE271

Datasheet Details

Part number NTE271
Manufacturer NTE
File Size 24.87 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE271 Datasheet
Additional preview pages of the NTE271 datasheet.

📁 Similar Datasheet

  • NTE276 - Silicon Controlled Rectifier (NTE Electronics)
  • NTE2000 - (NTExxxx) Linear Integrated Circuits (NTE Electronics)
  • NTE2001 - (NTExxxx) Linear Integrated Circuits (NTE Electronics)
  • NTE2003 - (NTExxxx) Linear Integrated Circuits (NTE Electronics)
  • NTE2004 - (NTExxxx) Linear Integrated Circuits (NTE Electronics)
  • NTE214 - (NTE74xx) Transistor Logic (NTE Electronics)
  • NTE2393 - N-Channel MOSFET (INCHANGE)
  • NTE2661 - Silicon NPN Transistor Horizontal Deflection Output (NTE Electronics)
  • NTE2662 - Silicon NPN Transistor High Frequency (NTE Electronics)
  • NTE2665 - Silicon NPN Transistor Horizontal Deflection Output (NTE Electronics)
Other Datasheets by NTE
  • NTE2716 - Integrated Circuit NMOS / 16K UV Erasable PROM
  • NTE27 - Germanium PNP Transistor High Current / High Gain Amp
  • NTE270 - Silicon Complementary Transistors Darlington Power Amp / Switch
  • NTE2708 - Integrated Circuit NMOS / 8K UV EPROM / 450ns
  • NTE272 - Silicon Darlington Complementary Power Amplifiers
  • NTE273 - Silicon Darlington Complementary
  • NTE2732A - Integrated Circuit 32K (4K x 8) NMOS UV Erasable PROM
  • NTE274 - Silicon Complementary Transistors Darlington Power Amplifier / Switch

Full PDF Text Transcription

Click to expand full text
NTE270 (NPN) & NTE271 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications. Features: D High DC Current Gain: hFE = 1000 Min @ IC = 5A, VCE = 4V D Collector–Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 30mA D Monolithic Construction with Built–In Base–Emitter Shunt Resistor Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Published: |