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NTE2716 - Integrated Circuit NMOS / 16K UV Erasable PROM

Datasheet Summary

Description

The NTE2716 is a 16,384 bit (2048 x 8 bit) Erasable and Electrically Reprogrammable PROM in a 24

Lead DIP type package designed for system debug usage and similar applications requiring nonvolatile memory that could be reprogrammed periodically.

Features

  • D Single 5V Power Supply D Automatic Power.
  • Down Mode (Standby) D Organized as 2048 Bytes of 8Bits D TTL Compatible During Read and Program D Access Time: 350ns D Output Enable Active Level is User Selectable Absolute Maximum Ratings: (Note 1) All Input or Output Voltages (with respect to VSS).
  • . . +6 to.
  • 0.3V VPP Supply Voltage (with respect to VSS).
  • . . . +28 to.

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Datasheet preview – NTE2716

Datasheet Details

Part number NTE2716
Manufacturer NTE
File Size 34.41 KB
Description Integrated Circuit NMOS / 16K UV Erasable PROM
Datasheet download datasheet NTE2716 Datasheet
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Full PDF Text Transcription

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NTE2716 Integrated Circuit NMOS, 16K UV Erasable PROM Description: The NTE2716 is a 16,384–bit (2048 x 8–bit) Erasable and Electrically Reprogrammable PROM in a 24–Lead DIP type package designed for system debug usage and similar applications requiring nonvolatile memory that could be reprogrammed periodically. The transparent lid on the package allows the memory content to be erased with ultraviolet light. The NTE2716 operates from a single power supply and has a static power down mode. Features: D Single 5V Power Supply D Automatic Power–Down Mode (Standby) D Organized as 2048 Bytes of 8Bits D TTL Compatible During Read and Program D Access Time: 350ns D Output Enable Active Level is User Selectable Absolute Maximum Ratings: (Note 1) All Input or Output Voltages (with respect to VSS) . .
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