Datasheet4U Logo Datasheet4U.com

NTE2732A - Integrated Circuit 32K (4K x 8) NMOS UV Erasable PROM

Datasheet Summary

Description

The NTE2732A is a 32,768 bits ultraviolet erasable and electrically programmable read only memory (EPROM) organized as 4,096 words by 8 bits and manufactured using N Channel Si

Gate MOS processing.

Features

  • an standby mode which reduces the power dissipation without increasing access time. The active current is 125mA while the maximum standby mode is achieved by applying a TTL.
  • high signal to the CE input. Features: D Fast Access Time: 200ns Max D 0° to +70°C Standard Temperature Range D Single +5V Power Supply D Low Standby Current (35mA Max) D Inputs and Outputs TTL Compatible During Read and Program D Completely Static Absolute Maximum Ratings: (Note 1) All Input or Output Voltages with r.

📥 Download Datasheet

Datasheet preview – NTE2732A

Datasheet Details

Part number NTE2732A
Manufacturer NTE
File Size 45.74 KB
Description Integrated Circuit 32K (4K x 8) NMOS UV Erasable PROM
Datasheet download datasheet NTE2732A Datasheet
Additional preview pages of the NTE2732A datasheet.
Other Datasheets by NTE

Full PDF Text Transcription

Click to expand full text
NTE2732A Integrated Circuit 32K (4K x 8) NMOS UV Erasable PROM Description: The NTE2732A is a 32,768–bits ultraviolet erasable and electrically programmable read–only memory (EPROM) organized as 4,096 words by 8 bits and manufactured using N–Channel Si–Gate MOS processing. With its single +5V power supply and with an access time of 200ns, the NTE2732A is ideal for use with high performance +5V microprocessors such as the NTE3880. The NTE2732A has an important feature which is the separate output control, Output Enable (OE) from the Chip Enable control (CE). The OE control eliminates bus contention in multiple bus microprocessor systems. The NTE2732A also features an standby mode which reduces the power dissipation without increasing access time.
Published: |