NTE29 Datasheet Silicon Complementary Transistors

Manufacturer: NTE Electronics (defunct)

NTE29 silicon complementary transistors by NTE Electronics (defunct) - Datasheet Preview

Datasheet Details

Part number	NTE29
Manufacturer	NTE Electronics (defunct)
File Size	24.22 KB
Description	Silicon Complementary Transistors
Datasheet	NTE29 Datasheet

General Description

: The NTE29 (NPN) and NTE30 (PNP) are compelmentary power transistors in a TO3 type case designed for use in high power amplifier and switching circuit applications.

Overview

NTE29 (NPN) & NTE30 (PNP) Silicon Complementary Transistors High Power, High Current.

Key Features

D High Current Capability: IC = 50A (Continuous) D DC Current Gain: hFE= 15 to 60 @ IC = 25A D Low Collector.
Emitter Saturation Voltage: VCE(sat) = 1V Max @ IC = 25A Absolute Maximum Ratings: Collector.
Emitter Voltage, VCEO.
. . . . 80V Collector.
Base Voltage, VCB.
. . 80V Emitter.

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