NTE2996 - N-Channel MOSFET

NTE Electronics (defunct)

Key Features

D Ultra Low On.
Resistance D Dynamic dv/dt Rating D +1755C Operating Temperature D Fast Switching D Fully Avalanche Rated D G Absolute Maximum Ratings: S Drain CCPuuorlnrsTTeteiCCnndtu==,(oIN++Duo21st50e(50VC25GC)(SN. . =o. . . . t1e. .0..1V. . )).

NTE2996 n-channel mosfet by NTE Electronics (defunct) - Datasheet Preview

Datasheet Details

Part number	NTE2996
Manufacturer	NTE Electronics (defunct)
File Size	62.15 KB
Description	N-Channel MOSFET
Datasheet	NTE2996 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
NTE299	Silicon NPN Transistor	NTE
NTE2990	P-Channel MOSFET	NTE
NTE2991	N-Channel MOSFET	NTE
NTE2992	N-Channel MOSFET	NTE
NTE2993	N-Channel MOSFET	NTE

Other Datasheets by NTE Electronics (defunct)

Part Number	Description
NTE2000	(NTExxxx) Linear Integrated Circuits
NTE2001	(NTExxxx) Linear Integrated Circuits
NTE2003	(NTExxxx) Linear Integrated Circuits
NTE2004	(NTExxxx) Linear Integrated Circuits
NTE214	(NTE74xx) Transistor Logic

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

NTE2996 MOSFET N−Channel, Enhancement Mode High Speed Switch TO220 Type Package Features: D Ultra Low On−Resistance D Dynamic dv/dt Rating D +1755C Operating Temperature D Fast Switching D Fully Avalanche Rated D G Absolute Maximum Ratings: S Drain CCPuuorlnrsTTeteiCCnndtu==,(oIN++Duo21st50e(50VC25GC)(SN..=o.. ..t1e..0..1V..)).. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84A . 59A 330A Total PDowerearteDiAsbsiopvaetio2n55(CTC. = .. +255C), .......