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NTE2997 - P-Channel MOSFET

Features

  • D Good Frequency Characteristics D High Speed Switching D Wide Area of Safe Operation D Enhancement Mode D Equipped with Gate Protection Diodes.

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Datasheet Details

Part number NTE2997
Manufacturer NTE
File Size 75.37 KB
Description P-Channel MOSFET
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Full PDF Text Transcription

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NTE2997 MOSFET P−Channel, Enhancement Mode High Speed Switch Features: D Good Frequency Characteristics D High Speed Switching D Wide Area of Safe Operation D Enhancement Mode D Equipped with Gate Protection Diodes Applications: D Low Frequency Power Amplifier D G S Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Drain−Source Voltage, VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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