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NTE2995 - N-Channel MOSFET

Features

  • D RDS(on) = 0.65Ω Typical D Extremely High dv/dt Capability D Gate Charge Minimized D Gate.
  • to.
  • Source Zener Diode Protected.

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Datasheet Details

Part number NTE2995
Manufacturer NTE
File Size 83.90 KB
Description N-Channel MOSFET
Datasheet download datasheet NTE2995 Datasheet
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Full PDF Text Transcription

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NTE2995 MOSFET N−Channel, Enhancement Mode High Speed Switch Features: D RDS(on) = 0.65Ω Typical D Extremely High dv/dt Capability D Gate Charge Minimized D Gate−to−Source Zener Diode Protected Applications: D High Current, High Speed Switching D Ideal for Off−Line Power Supplies, Adaptor and PFC D Lighting D G S Absolute Maximum Ratings: Drain−Source Voltage (VGS = 0), VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Drain−Gate Voltage (RGS = 20kΩ), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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