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NTE2903 - N-Channel MOSFET

Features

  • D Low Drain.
  • Source ON Resistance: RDS(ON) = 1.35 Typ D High Forward Transfer Admittance: |yfs| = 3.5S Typ D Low Leakage Current: IDSS = 100A (VDS = 500V) D Enhancement Mode: Vth = 2.0 to 4.0V (VDS = 10V, ID = 1mA) G S Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Drain.
  • Source Voltage, VDSS.
  • . 500V Drain.
  • Gate Voltage (RGS = 20k), VDGR.

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Datasheet Details

Part number NTE2903
Manufacturer NTE Electronics (defunct)
File Size 68.15 KB
Description N-Channel MOSFET
Datasheet download datasheet NTE2903 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTE2903 MOSFET N−Ch, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package D Features: D Low Drain−Source ON Resistance: RDS(ON) = 1.35 Typ D High Forward Transfer Admittance: |yfs| = 3.5S Typ D Low Leakage Current: IDSS = 100A (VDS = 500V) D Enhancement Mode: Vth = 2.0 to 4.0V (VDS = 10V, ID = 1mA) G S Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Drain−Gate Voltage (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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