NTE2916 - N-Channel MOSFET

NTE Electronics (defunct)

General Description

S The NTE2916 Power MOSFET utilizes advanced processing techniques to achieve extremely low on

resistance per silicon area.

Key Features

D D Advanced Process Technology D Dynamic dv/dt Rating D +1755C Operating Temperature D Fast Switching D Fully Avalanche Rated G D Ease of Paralleling.

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NTE2916 n-channel mosfet by NTE Electronics (defunct) - Datasheet Preview

Datasheet Details

Part number	NTE2916
Manufacturer	NTE Electronics (defunct)
File Size	75.18 KB
Description	N-Channel MOSFET
Datasheet	NTE2916 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTE2916 MOSFET N−Ch, Enhancement Mode High Speed Switch TO247 Type Package Features: D D Advanced Process Technology D Dynamic dv/dt Rating D +1755C Operating Temperature D Fast Switching D Fully Avalanche Rated G D Ease of Paralleling Description: S The NTE2916 Power MOSFET utilizes advanced processing techniques to achieve extremely low on−resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO247 package is preferred for commercial−industrial applications where higher power levels preclude the use of TO220 devices.