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NTE2950 - N-Channel MOSFET

Key Features

  • D Low RDSON Reduces Losses D Low Gate Charge Improves the Switching Performance D Improved Diode Recovery Improves Switching & EMI Performance D 30V Gate Voltage Rating Improves Robustness D Fully Characterized Avalanche SOA D.

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Datasheet Details

Part number NTE2950
Manufacturer NTE Electronics (defunct)
File Size 74.50 KB
Description N-Channel MOSFET
Datasheet download datasheet NTE2950 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTE2950 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−262 Type Package Features: D Low RDSON Reduces Losses D Low Gate Charge Improves the Switching Performance D Improved Diode Recovery Improves Switching & EMI Performance D 30V Gate Voltage Rating Improves Robustness D Fully Characterized Avalanche SOA D Applications D Motion Control Applications D High Efficiency Synchronous Rectification in SMPS D Uninterruptible Power Supply D Hard Switched and High Frequency Circuits G S Absolute Maximum Ratings: Continuous TTCC = = +D2ra5inCC(uNroretent1()V.G.S. +100C . . . . . . . . . . = .. .. 10V), ..... ..... .ID. . ... . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .