NTE3098 Overview
Key Specifications
Mount Type: Through Hole
Pins: 4
Height: 12.7 mm
Length: 152.4 mm
Description
The NTE3098 consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a single 4–Lead DIP type package. Features: D Collector–Emitter Voltage: VCEO = 55V Min D Current Transfer Ratio: IC/IF = 100% Min D Isolation Voltage: BVS = 5000Vrms Min.
Key Features
- D Collector–Emitter Voltage: VCEO = 55V Min D Current Transfer Ratio: IC/IF = 100% Min D Isolation Voltage: BVS = 5000Vrms Min
