NTE325 Datasheet | NTE Electronics

Description : The NTE325 is a silicon NPN RF power transistor in a T72H type package designed for power amplifier applications in industrial, mercial, and amateur radio equipment to 30MHz. Features : D Specified 12.5V, 30MHz Characteristics: Output Power = 50W Minimum Gain = 11d B Efficiency = 50% Absolute Maximum Ratings: Collector- Emitter Voltage, VCEO - - - - - - - - - - . . . . 20V Collector- Base Voltage, VCBO - - - - - - - - - - - 40V Emitter- Base Voltage, VEBO - - - - - - - - - - - . . . 4V Continuous Collector Current, IC - - - - - - - - - - . . 7.5A Total Device Dissipation (TC = +25°C), PD - - - - - - - - . . . 115W Derate Above 25°C - - - - - - - - - - . . . . 0.66W/°C Storage Temperature Range, Tstg - - - - - - - - . . - 65° to +150°C Thermal Resistance, Junction to Case, RΘJC -...