NTE326 Datasheet | NTE Electronics

NTE326 Silicon P- Channel JFET Transistor General Purpose AF Amplifier Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Drain- Gate Voltage, VDG - - - - - - - - - - - - 40V Reverse Gate- Source Voltage, VGSR - - - - - - - - - . . . . 40V Forward Gate Current, IG(f) - - - - - - - - - - - . 10m A Total Device Dissipation (TA = +25°C), PD - - - - - - - - . 310m W Derate Above 25°C - - - - - - - - - - . . 2.82m W/°C Operating Junction Temperature Range, TJ - - - - - - . . . . - 65° to +135°C Storage Temperature Range, Tstg - - - - - - - - . . - 55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter OFF Characteristics Gate- Source Breakdown Voltage Gate Reverse Current V(BR)GSS IG = 10µA, VDS = 0 IGSS VGS(off) VGS IDSS |yfs| |yos| Ciss Crss NF en VGS = 20V, VDS = 0 VGS = 20V, VDS = 0, TA = +100°C Gate- Source Cutoff Voltage Gate- Source Voltage ON Characteristics Zero- Gate- Voltage Drain Current Small- Signal Characteristics Forward Transfer Admittance Output Admittance Input Capacitance Reverse Transfer Capacitance Functional Characteristics Noise Figure Equivalent Short- Circuit Input Noise Voltage VDS = 15V, VGS = 0, RG = 1MΩ, f = 100Hz, BW = 1Hz VDS = 15V, VGS = 0, f = 100Hz, BW = 1Hz - - 1.0 60 2.5 115 d B n V/p Hz VDS = 15V, VGS = 0, f = 1k Hz VDS = 15V, VGS = 0, f = 1k Hz VDS = 15V, VGS = 0, f = 1MHz VDS = 15V, VGS = 0, f = 1MHz 1500 - -...