NTE329 Datasheet | NTE Electronics

Description : The NTE329 is designed primarily for use in large- signal output amplifier stages. Intended for use in Citizen- Band munications equipment operating to 30MHz. High breakdown voltages allow a high percentage of up- modulation in AM circuits. Features : D Specified 12.5V, 28MHz Characteristic: Power Output = 3.5W Power Gain = 10d B Efficiency = 70% Typical Absolute Maximum Ratings: Collector- Emitter Voltage, VCEO - - - - - - - - - - . . . . 30V Collector- Base Voltage, VCBO - - - - - - - - - - - 60V Emitter- Base Voltage, VEBO - - - - - - - - - - - . . . 3V Continuous Collector Current, IC - - - - - - - - - - . . . . 1A Total Device Dissipation (TC = +25°C, Note 1), PD - - - - - - - . . . 5W Derate above 25°C - - - - - - - - - - . . 28.6m W/°C Storage Temperature Range, Tstg - - - - - - - - . . - 65° to +200°C Note 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. Electrical Characteristics: (TA = +25°C, unless otherwise specified) Parameter OFF Characteristics Collector- Emitter Breakdown Voltage V(BR)CEO IC = 50m A, IB = 0 V(BR)CES IC = 200m A, VBE = 0 Emitter- Base Breakdown Voltage Collector Cutoff Current ON Characteristics DC Current Gain Dynamic Characteristics Output Capacitance Cob VCB = 12.5V, IE = 0, f =...