Datasheet Summary
NTE3310 Insulated Gate Bipolar Transistor N- Channel Enhancement Mode, High Speed Switch
Features
: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: (TA = +25°C unless otherwise specified) Collector- Emitter Voltage, VCES
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- - . . . 600V Gate- Emitter Voltage, VGES
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- . ±20V Collector Current, IC DC
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