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NTE3312 - Insulated Gate Bipolar Transistor

Features

  • D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode.

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Datasheet Details

Part number NTE3312
Manufacturer NTE Electronics (defunct)
File Size 18.85 KB
Description Insulated Gate Bipolar Transistor
Datasheet download datasheet NTE3312 Datasheet

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Full PDF Text Transcription

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NTE3312 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V Gate–Emitter Voltage, VGES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Collector Current, IC DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Pulse (1ms) . . . . . . . . . . . . . . .
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