Datasheet Summary
NTE3312 Insulated Gate Bipolar Transistor N- Channel Enhancement Mode, High Speed Switch
Features
: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: (TA = +25°C unless otherwise specified) Collector- Emitter Voltage, VCES
- -
- -
- -
- -
- - . . 1200V Gate- Emitter Voltage, VGES
- -
- -
- -
- -
- -
- . ±20V Collector Current, IC DC
- -
- -
- -
- -
- ....