NTE3321 Overview
Key Features
- 600V Gate–Emitter Voltage, VGES
- ±20V Collector Current, IC DC
- 160A Collector Power Dissipation (TC = +25°C), PC
- 200W Operating Junction Temperature, TJ
- +150°C Storage Temperature Range, Tstg
| Part | NTE3321 |
|---|---|
| Description | Insulated Gate Bipolar Transistor |
| Category | Transistor |
| Manufacturer | NTE Electronics |
| Size | 20.97 KB |
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