• Part: NTE3323
  • Description: Insulated Gate Bipolar Transistor
  • Manufacturer: NTE Electronics
  • Size: 20.83 KB
Download NTE3323 Datasheet PDF
NTE Electronics
NTE3323
NTE3323 is manufactured by NTE Electronics.
NTE3323 Insulated Gate Bipolar Transistor N- Channel Enhancement Mode, High Speed Switch Features : D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: (TA = +25°C unless otherwise specified) Collector- Emitter Voltage, VCES - - - - - - - - - - . . 1200V Gate- Emitter Voltage, VGES - - - - - - - - - - - . ±20V Collector Current, IC DC - - - - - - - - - ....