Description
The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high
speed switching and linear amplifier applications for high
voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers.
Features
- D Collector.
- Emitter Sustaining Voltage: NTE38: VCEO(sus) = 350V @ IC = 200mA NTE175: VCEO(sus) = 300V @ IC = 200mA D Second Breakdown Collector Current: NTE38 IS/b = 875mA @ VCE = 40V NTE175 IS/b = 350mA @ VCE = 100V D Usable DC Current Gain to 2.0Adc Absolute Maximum Ratings: Collector.
- Emitter Voltage, VCEO NTE38.
- . . . . 350V NTE175.
NTE38 Datasheet
