NTE38 Overview
Key Specifications
Package: R
Mount Type: Through Hole
Pins: 3
Height: 8.7376 mm
Description
The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high– speed switching and linear amplifier applications for high–voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers. Features: D Collector–Emitter Sustaining Voltage: NTE38: VCEO(sus) = 350V @ IC = 200mA NTE175: VCEO(sus) = 300V @ IC = 200mA D Second Breakdown Collector Current: NTE38 IS/b = 875mA @ VCE = 40V NTE175 IS/b = 350mA @ VCE = 100V D Usable DC Current Gain to 2.0Adc.
Key Features
- 5A Base Current, IB
- 1A Total Power Dissipation (TC = +25°C), PD
