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NTE50 - Silicon Complementary Transistors

Download the NTE50 datasheet PDF. This datasheet also covers the NTE49 variant, as both devices belong to the same silicon complementary transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

The NTE49 (NPN) and NTE50 (PNP) are silicon complementary transistors in a TO202 type case designed for general purpose, high voltage amplifier and driver applications.

Key Features

  • D High Collector Breakdown Voltage: V(BR)CEO = 100V Min @ IC = 1mA D High Power Dissipation: PD = 10W @ TC = +25°C Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . 100V Collector.
  • Base Voltage, VCB.
  • . 120V Emitter.
  • Base Voltage, VEB.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NTE49_NTEElectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NTE50
Manufacturer NTE Electronics (defunct)
File Size 27.24 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE50 Datasheet

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Other Datasheets by NTE Electronics (defunct)

Part Number Description
NTE5000A Zener Diode
NTE5001A (NTE5000A - NTE5060A) Zener Diode / 1/2 Watt 5% Tolerance
NTE5002A (NTE5000A - NTE5060A) Zener Diode / 1/2 Watt 5% Tolerance
NTE5003A (NTE5000A - NTE5060A) Zener Diode / 1/2 Watt 5% Tolerance
NTE5004A (NTE5000A - NTE5060A) Zener Diode / 1/2 Watt 5% Tolerance

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NTE49 (NPN) & NTE50 (PNP) Silicon Complementary Transistors General Purpose, High Voltage Amp, Driver Description: The NTE49 (NPN) and NTE50 (PNP) are silicon complementary transistors in a TO202 type case designed for general purpose, high voltage amplifier and driver applications. Features: D High Collector Breakdown Voltage: V(BR)CEO = 100V Min @ IC = 1mA D High Power Dissipation: PD = 10W @ TC = +25°C Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . .