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NTE55 - Silicon Complementary Transistors

This page provides the datasheet information for the NTE55, a member of the NTE54 Silicon Complementary Transistors family.

Datasheet Summary

Description

The NTE54 (NPN) and NTE55 (PNP) are silicon complementary transistors in a TO220 type case designed for use as a high frequency driver in audio amplifier applications.

Features

  • D DC Current Gain Specified to 4A: hFE = 40 Min @ IC = 3A = 20 MIn @ IC = 4A D Collector.
  • Emitter Sustaining Voltage: VCEO(sus) = 150V Min D High Current Gain.
  • Bandwidth Product: fT = 30MHz Min @ IC = 500mA Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . 150V Collector.
  • Base Voltage, VCBO.

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Datasheet preview – NTE55

Datasheet Details

Part number NTE55
Manufacturer NTE
File Size 23.30 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE55 Datasheet
Additional preview pages of the NTE55 datasheet.

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Full PDF Text Transcription

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NTE54 (NPN) & NTE55 (PNP) Silicon Complementary Transistors High Frequency Driver for Audio Amplifier Description: The NTE54 (NPN) and NTE55 (PNP) are silicon complementary transistors in a TO220 type case designed for use as a high frequency driver in audio amplifier applications. Features: D DC Current Gain Specified to 4A: hFE = 40 Min @ IC = 3A = 20 MIn @ IC = 4A D Collector–Emitter Sustaining Voltage: VCEO(sus) = 150V Min D High Current Gain–Bandwidth Product: fT = 30MHz Min @ IC = 500mA Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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