NTE507 Datasheet | NTE Electronics

Description : The NTE507 is a silicon rectifier diode designed for special applications such as DC power supplies, inverters, converters, ultrasonic systems, choppers, low RF interference and free wheeling diodes. This device has a typical recovery time of 150 nanoseconds providing high efficiency at frequencies to 250k Hz. Absolute Maximum Ratings: Peak Repetitive Reverse Voltage, VRRM - - - - - - - - - . . 50V Working Peak Reverse Voltage, VRWM - - - - - - - - - . . . 50V DC Blocking Voltage - - - - - - - - - - - - . . . . 50V Non- Repetitive Peak Reverse Voltage, VRSM - - - - - - - - . . 75V RMS Reverse Voltage, VR(RMS) - - - - - - - - - - . . . . 35V Average Rectified Forward Current (Single Phase, Resistive Load, TA = +75°C), IO - . . . 1.0A Nonrepetitive Peak Surge Current (Surge Applied at Rated Load Conditions), IFSM - . . . . 30A Operating Junction Temperature Range, TJ - - - - - - . . . - 65° to +150°C Storage Temperature Range, Tstg - - - - - - - - . . - 65° to +175°C Thermal Resistance, Junction- to- Ambient (Typical PC Board Mounting), Rth JA - . . . 65°C/W Electrical Characteristics: Parameter Instantaneous Forward Voltage Forward Voltage Reverse Current Reverse Recovery Time Reverse Recovery Current Symbol VF VF IR trr Test Conditions IF = 3.14A, TJ = +150°C IF = 1A, TA = +25°C VR = 50V, TA = +25°C VR = 50V, TA = +100°C IF = 1A to VR = 30V, IFM = 15A, di/dt = 10A/µs...