NTE5424 Datasheet | NTE Electronics

Description : The NTE5424 is a silicon controlled rectifier (SCR) in a TO220 type package designed for high- speed switching applications such as power inverters, switching regulators, and high- current pulse applications. This device features fast turn- off, high dv/dt, and high di/dt characteristics and may be used at frequencies up to 25k Hz. Features : D Fast Turn- Off Time D High di/dt and dv/dt Capabilities D Shorted- Emitter Gate- Cathode Construction D Low Thermal Resistance D Center- Gate Construction Absolute Maximum Ratings: Repetitive Peak Off- State Voltage (Gate Open, Note 1), VDRM - - - - - . 400V Repetitive Peak Reverse Voltage (Gate Open, Note 1), VRRM - - - - - . . 400V RMS On- State Current (TC = +60°C, t1/t2 = 0.5), IT(RMS) - - - - - - . 5.0A Average On- State Current (TC = +60°C, t1/t2 = 0.5), IT(AV) - - - - - - 3.2A Peak Surge (Non- Repetitive) On- State Current (One Cycle), ITSM 60Hz Sinusoidal - - - - - - - - - - - - . . 80A 50Hz Sinusoidal - - - - - - - - - - - - . . 75A Peak Forward Gate Power Dissipation (10µs max, Note 2), PGM - - - - . . . . 13W Peak Reverse Gate Power Dissipation (10µs max, Note 2), PRGM - - - - . . . 13W Average Gate Power Dissipation (10ms max, Note 2), PG(AV) - - - - - 500m W Rate of Change of On- State Current VDM = 400V, IGT = 500m A, tr = 0.5µs), di/dt - . . 200A/µs Fusing Current (TC = +60°C, 8.3ms), I2t - - - - - - - - - 26A2s Operating Case Temperature Range,...