NTE5426
NTE5426 is Silicon Controlled Rectifier manufactured by NTE Electronics.
Description
: The NTE5426 is silicon controlled rectifier (SCR) in an isolated tab TO220 type package. This device may be switched from off- state to conduction by a current pulse applied to the gate terminal and is designed for control applications in lighting, heating, cooling, and static switching relays. Absolute Maximum Ratings: Repetitive Peak Off- State Voltage (Gate Open, TC = +110°C), VDRM
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- - . 400V Repetitive Peak Reverse Voltage (Gate Open, TC = +110°C), VRRM
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- - . . 400V RMS On- State Current (TC = +80°C, 180° Conduction Angle), IT(RMS)
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- - 10A Peak Surge (Non- Repetitive) On- State Current (One Cycle, 50 or 60Hz), ITSM
- - . . 80A Peak Gate- Trigger Current (3µs max), IGTM
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- - . . . . 1A Peak Gate- Power Dissipation (IGT = IGTM), PGM
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- . . . 16W Average Gate Power Dissipation, PG(AV)
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- - . . . 500m W Operating Temperature Range, Topr
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- 40° to +100°C Storage Temperature Range, Tstg
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- 40° to +150°C Typical Thermal Resistance, Junction- to- Case, Rth JC
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- - 3.0°C/W Electrical Characteristics: (TC = +25°C and “Maximum Ratings” unless otherwise specified)
Parameter Peak Off- State Current Maximum On- State Voltage Gate Trigger Current, Continuous DC Gate Trigger Voltage, Continuous DC DC Holding Current Turn- On Time Critical Rate of Rise of Off- State Voltage Symbol IDRM, IRRM VTM IGT VGT IH tgt critical dv/dt Test Conditions Rated VDRM or VRRM, TC = +110°C, RG
- K = 1kΩ IT = Rated Amps Anode Voltage = 12V, RL = 60Ω...