• Part: NTE5426
  • Description: Silicon Controlled Rectifier
  • Manufacturer: NTE Electronics
  • Size: 18.24 KB
Download NTE5426 Datasheet PDF
NTE Electronics
NTE5426
NTE5426 is Silicon Controlled Rectifier manufactured by NTE Electronics.
Description : The NTE5426 is silicon controlled rectifier (SCR) in an isolated tab TO220 type package. This device may be switched from off- state to conduction by a current pulse applied to the gate terminal and is designed for control applications in lighting, heating, cooling, and static switching relays. Absolute Maximum Ratings: Repetitive Peak Off- State Voltage (Gate Open, TC = +110°C), VDRM - - - - . 400V Repetitive Peak Reverse Voltage (Gate Open, TC = +110°C), VRRM - - - - . . 400V RMS On- State Current (TC = +80°C, 180° Conduction Angle), IT(RMS) - - - - 10A Peak Surge (Non- Repetitive) On- State Current (One Cycle, 50 or 60Hz), ITSM - - . . 80A Peak Gate- Trigger Current (3µs max), IGTM - - - - - - - - . . . . 1A Peak Gate- Power Dissipation (IGT = IGTM), PGM - - - - - - - . . . 16W Average Gate Power Dissipation, PG(AV) - - - - - - - - . . . 500m W Operating Temperature Range, Topr - - - - - - - - - 40° to +100°C Storage Temperature Range, Tstg - - - - - - - - . . - 40° to +150°C Typical Thermal Resistance, Junction- to- Case, Rth JC - - - - - - 3.0°C/W Electrical Characteristics: (TC = +25°C and “Maximum Ratings” unless otherwise specified) Parameter Peak Off- State Current Maximum On- State Voltage Gate Trigger Current, Continuous DC Gate Trigger Voltage, Continuous DC DC Holding Current Turn- On Time Critical Rate of Rise of Off- State Voltage Symbol IDRM, IRRM VTM IGT VGT IH tgt critical dv/dt Test Conditions Rated VDRM or VRRM, TC = +110°C, RG - K = 1kΩ IT = Rated Amps Anode Voltage = 12V, RL = 60Ω...