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NTE5511 - Silicon Controlled Rectifier

Datasheet Summary

Description

The NTE5511 thru NTE5513 all diffused, three junction, silicon controlled rectifiers (SCR’s) are intended for use in power control and power

switching applications.

Features

  • D Designed Especially for High.
  • Volume Systems D Readily Adaptable for PC Boards and Metal Heat Sinks D Low Switching Losses D High di/dt and dv/dt Capabilities D Shorted Emitter Gate.
  • Cathode Construction D Forward and Reverse Gate Dissipation Ratings D All.
  • Diffused Construction Assures Exceptional Uniformity and Stability of Characteristics D Direct.
  • Soldered Internal Construction Assures Exceptional Resistance to Fatigue D Symmetrical Gate.
  • Cathode Constru.

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Datasheet preview – NTE5511

Datasheet Details

Part number NTE5511
Manufacturer NTE
File Size 22.63 KB
Description Silicon Controlled Rectifier
Datasheet download datasheet NTE5511 Datasheet
Additional preview pages of the NTE5511 datasheet.

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Full PDF Text Transcription

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NTE5511 thru NTE5513 Silicon Controlled Rectifier (SCR) 5 Amp Description: The NTE5511 thru NTE5513 all–diffused, three junction, silicon controlled rectifiers (SCR’s) are intended for use in power–control and power–switching applications. These devices are available in a TO66 type package and have a blocking voltage capability of up to 600V and a forward current rating of 5A (rms value) at a case temperature of +75°C.
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