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TIP112 - Silicon NPN Transistor

General Description

The TIP112 is a silicon NPN Darlington transistor in a TO 220 type package designed for general purpose amplifier and low

speed switching applications.

Key Features

  • D High DC Current Gain: hFE = 2500 (Typ) at IC = 1A D Collector.
  • Emitter Sustaining Voltage: VCEO(sus) = 100V (Min) at IC = 30mA D Low Collector.
  • Emitter Saturation Voltage: VCE(sat) = 2.5V (Max) at IC = 2A Absolute Maximum Ratings: (Note 1) Collector.
  • Emitter Voltage, VCEO.
  • . . . 100V Collector.
  • Base Voltage, VCB.

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Datasheet Details

Part number TIP112
Manufacturer NTE Electronics (defunct)
File Size 55.18 KB
Description Silicon NPN Transistor
Datasheet download datasheet TIP112 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TIP112 Silicon NPN Transistor Darlington Power Amp, Switch TO−220 Type Package Description: The TIP112 is a silicon NPN Darlington transistor in a TO−220 type package designed for general purpose amplifier and low−speed switching applications. Features: D High DC Current Gain: hFE = 2500 (Typ) at IC = 1A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 100V (Min) at IC = 30mA D Low Collector−Emitter Saturation Voltage: VCE(sat) = 2.5V (Max) at IC = 2A Absolute Maximum Ratings: (Note 1) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .