TIP112 - Silicon NPN Transistor

Product Overview

NTE

TIP112 Silicon NPN Transistor by NTE - Datasheet Preview — Datasheet preview – TIP112

Datasheet Details

Part number	TIP112
Manufacturer	NTE
File Size	55.18 KB
Description	Silicon NPN Transistor
Datasheet	TIP112 Datasheet
Additional preview pages of the TIP112 datasheet.

Product details

Description

The TIP112 is a silicon NPN Darlington transistor in a TO 220 type package designed for general purpose amplifier and low speed switching applications.

Features

D High DC Current Gain: hFE = 2500 (Typ) at IC = 1A D Collector.
Emitter Sustaining Voltage: VCEO(sus) = 100V (Min) at IC = 30mA D Low Collector.
Emitter Saturation Voltage: VCE(sat) = 2.5V (Max) at IC = 2A Absolute Maximum Ratings: (Note 1) Collector.
Emitter Voltage, VCEO.
. . . 100V Collector.
Base Voltage, VCB.

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Other Datasheets by NTE

TIP110 - Silicon NPN Transistor
TIP111 - Silicon NPN Transistor
TIP116 - Silicon PNP Transistor
TIP100 - Silicon NPN Darlington Power Amp
TIP101 - Silicon NPN Darlington Power Amp
TIP102 - Silicon NPN Darlington Power Amp

Published: Jul 5, 2020 |