74AHCT2G00 - high-speed Si-gate CMOS device

NXP Semiconductors

General Description

The 74AHC2G/AHCT2G00 is a high-speed Si-gate CMOS device.

The 74AHC2G/AHCT2G00 provides the 2-input NAND gate function.

CDM EIA/JESD22-C101 exceeds 500 V.

Low power dissipation Balanced propagation delays SOT505-2 and SOT765-1 package Specified fro

Key Features

Symmetrical output impedance.
High noise immunity.
ESD protection:.
HBM EIA/JESD22-A114-A exceeds 2000 V.
MM EIA/JESD22-A115-A exceeds 200 V www. DataSheet4U. com 74AHC2G00; 74AHCT2G00.

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74AHCT2G00 high-speed si-gate cmos device by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	74AHCT2G00
Manufacturer	NXP Semiconductors
File Size	135.76 KB
Description	high-speed Si-gate CMOS device
Datasheet	74AHCT2G00 Datasheet

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Full PDF Text Transcription (Reference)

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INTEGRATED CIRCUITS DATA SHEET www.DataSheet4U.com 74AHC2G00; 74AHCT2G00 2-input NAND gate Product speciﬁcation 2004 Jan 21 Philips Semiconductors Product speciﬁcation 2-input NAND gate FEATURES • Symmetrical output impedance • High noise immunity • ESD protection: – HBM EIA/JESD22-A114-A exceeds 2000 V – MM EIA/JESD22-A115-A exceeds 200 V www.DataSheet4U.com 74AHC2G00; 74AHCT2G00 DESCRIPTION The 74AHC2G/AHCT2G00 is a high-speed Si-gate CMOS device. The 74AHC2G/AHCT2G00 provides the 2-input NAND gate function. – CDM EIA/JESD22-C101 exceeds 500 V. • Low power dissipation • Balanced propagation delays • SOT505-2 and SOT765-1 package • Specified from −40 to +85 °C and −40 to +125 °C. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 3.0 ns.