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74LVC1G38 - 2-input NAND gate

General Description

The 74LVC1G38 provides a 2-input NAND function.

Inputs can be driven from either 3.3 V or 5 V devices.

This feature allows the use of this device as translator in a mixed 3.3 V and 5 V environment.

Key Features

  • I I I I Wide supply voltage range from 1.65 V to 5.5 V 5 V tolerant outputs for interfacing with 5 V logic High noise immunity Complies with JEDEC standard: N JESD8-7 (1.65 V to 1.95 V) N JESD8-5 (2.3 V to 2.7 V) N JESD8-B/JESD36 (2.7 V to 3.6 V). ESD protection: N HBM JESD22-A114E exceeds 2000 V N MM JESD22-A115-A exceeds 200 V ±24 mA output drive (VCC = 3.0 V) CMOS low power consumption Open drain outputs Latch-up performance exceeds 250 mA Direct interface with TTL levels Inputs accept voltag.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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74LVC1G38 2-input NAND gate; open drain Rev. 03 — 27 August 2007 www.DataSheet4U.com Product data sheet 1. General description The 74LVC1G38 provides a 2-input NAND function. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of this device as translator in a mixed 3.3 V and 5 V environment. This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down. 2. Features I I I I Wide supply voltage range from 1.65 V to 5.5 V 5 V tolerant outputs for interfacing with 5 V logic High noise immunity Complies with JEDEC standard: N JESD8-7 (1.65 V to 1.95 V) N JESD8-5 (2.3 V to 2.7 V) N JESD8-B/JESD36 (2.7 V to 3.6 V).