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BFU725F

Manufacturer: NXP Semiconductors

BFU725F datasheet by NXP Semiconductors.

BFU725F datasheet preview

BFU725F Datasheet Details

Part number BFU725F
Datasheet BFU725F_NXPSemiconductors.pdf
File Size 136.91 KB
Manufacturer NXP Semiconductors
Description NPN wideband silicon germanium RF transistor
BFU725F page 2 BFU725F page 3

BFU725F Overview

NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices.

BFU725F Key Features

  • Low noise high gain microwave transistor
  • Noise figure (NF) = 0.7 dB at 5.8 GHz
  • High maximum stable gain 27 dB at 1.8 GHz
  • 110 GHz fT silicon germanium technology

BFU725F-N1 from other manufacturers

View BFU725F-N1 datasheet index

Brand Logo Part Number Description Other Manufacturers
NXP Logo BFU725F-N1 NPN wideband silicon germanium RF transistor NXP
NXP Semiconductors logo - Manufacturer

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BFU725F Distributor

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