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BFU725F-N1 - NPN wideband silicon germanium RF transistor

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NXP

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BFU725F-N1 NPN wideband silicon germanium RF transistor by NXP - Datasheet Preview — Datasheet preview – BFU725F-N1

Datasheet Details

Part number	BFU725F-N1
Manufacturer	NXP
File Size	101.08 KB
Description	NPN wideband silicon germanium RF transistor
Datasheet	BFU725F-N1 Datasheet
Additional preview pages of the BFU725F-N1 datasheet.

Product details

Description

NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

Features

Low noise high gain microwave transistor.
Noise figure (NF) = 0.7 dB at 5.8 GHz.
High maximum stable gain 27 dB at 1.8 GHz.
110 GHz fT silicon germanium technology 1.3.

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Published: Oct 16, 2016 |