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BFU725F-N1 - NPN wideband silicon germanium RF transistor

General Description

NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

This device is sensitive to ElectroStatic Discharge (ESD).

Observe precautions for handling electrostatic sensitive devices.

Key Features

  • Low noise high gain microwave transistor.
  • Noise figure (NF) = 0.7 dB at 5.8 GHz.
  • High maximum stable gain 27 dB at 1.8 GHz.
  • 110 GHz fT silicon germanium technology 1.3.

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Full PDF Text Transcription (Reference)

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BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 2 — 3 November 2011 Product data sheet 1. Product profile CAUTION 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features and benefits  Low noise high gain microwave transistor  Noise figure (NF) = 0.7 dB at 5.8 GHz  High maximum stable gain 27 dB at 1.8 GHz  110 GHz fT silicon germanium technology 1.