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BFU768F - NPN wideband silicon germanium RF transistor

General Description

NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

This device is sensitive to ElectroStatic Discharge (ESD).

Observe precautions for handling electrostatic sensitive devices.

Key Features

  • Low noise high linearity RF transistor.
  • 110 GHz fT silicon germanium technology.
  • Optimal linearity for low current and high gain.
  • Low minimum noise figure of 0.50 dB at 2.4 GHz and 0.74 dB at 5.8 GHz.
  • Low component count Wi-Fi LNA.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BFU768F NPN wideband silicon germanium RF transistor Rev. 1.2 — 24 December 2012 Product data sheet 1. Product profile CAUTION 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features and benefits  Low noise high linearity RF transistor  110 GHz fT silicon germanium technology  Optimal linearity for low current and high gain  Low minimum noise figure of 0.50 dB at 2.4 GHz and 0.74 dB at 5.