BFU768F Description
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices.
BFU768F Key Features
- Low noise high linearity RF transistor
- 110 GHz fT silicon germanium technology
- Optimal linearity for low current and high gain
- Low minimum noise figure of 0.50 dB at 2.4 GHz and 0.74 dB at 5.8 GHz
- Low ponent count Wi-Fi LNA application circuits available for 2.4 GHz ISM band
- Low current: 10.8 mA
- Noise figure < 1.2 dB
- Gain: 13.1 dB at 2.4 GHz, 12.2 dB at 5 GHz
- High IP3: 15.7 dBm at 2.4 GHz, 18.8 dBm at 5 GHz
- Very fast on/off times