Datasheet Summary
NPN wideband silicon germanium RF transistor
Rev. 1.2
- 24 December 2012
Product data sheet
1. Product profile
CAUTION
1.1 General description
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards.
1.2 Features and benefits
- Low noise high linearity RF transistor
- 110 GHz fT silicon germanium technology
- Optimal linearity for low current and high gain
- Low minimum noise...