BFU730LX Description
NPN silicon germanium microwave transistor for high speed, low noise applications in a SOT883C leadless ultra small plastic SMD package. This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices.
BFU730LX Key Features
- Leadless ultra small plastic SMD package 1.0 mm 0.6 mm 0.34 mm
- Low noise high gain microwave transistor
- Noise figure (NF) = 0.75 dB at 6 GHz
- High maximum power gain (Gp(max)) of 15.8 dB at 6 GHz
- Excellent linearity in WiFi LNA from 5 GHz to 5.9 GHz
- input third-order intercept point (IP3i) = 15 dBm
- input power at 1 dB gain pression (Pi(1dB)) = 0 dBm See application note AN11224: Low Noise Fast Turn ON/OFF 5-5.9GHz Wi
- 110 GHz fT silicon germanium technology