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BFU730LX - NPN wideband silicon germanium RF transistor

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BFU730LX NPN wideband silicon germanium RF transistor by NXP - Datasheet Preview — Datasheet preview – BFU730LX

Datasheet Details

Part number	BFU730LX
Manufacturer	NXP
File Size	124.23 KB
Description	NPN wideband silicon germanium RF transistor
Datasheet	BFU730LX Datasheet
Additional preview pages of the BFU730LX datasheet.

Product details

Description

NPN silicon germanium microwave transistor for high speed, low noise applications in a SOT883C leadless ultra small plastic SMD package.

This device is sensitive to ElectroStatic Discharge (ESD).

Observe precautions for handling electrostatic sensitive devices.

Features

Leadless ultra small plastic SMD package 1.0 mm  0.6 mm  0.34 mm.
Low noise high gain microwave transistor.
Noise figure (NF) = 0.75 dB at 6 GHz.
High maximum power gain (Gp(max)) of 15.8 dB at 6 GHz.
Excellent linearity in WiFi LNA from 5 GHz to 5.9 GHz:.
input third-order intercept point (IP3i) = 15 dBm.
input power at 1 dB gain compression (Pi(1dB)) = 0 dBm See.

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Published: Mar 23, 2016 |