BFU730LX - NPN wideband silicon germanium RF transistor

NPN silicon germanium microwave transistor for high speed, low noise applications in a SOT883C leadless ultra small plastic SMD package.

This device is sensitive to ElectroStatic Discharge (ESD).

Observe precautions for handling electrostatic sensitive devices.

• Leadless ultra small plastic SMD package 1.0 mm  0.6 mm  0.34 mm.
• Low noise high gain microwave transistor.
• Noise figure (NF) = 0.75 dB at 6 GHz.
• High maximum power gain (Gp(max)) of 15.8 dB at 6 GHz.
• Excellent linearity in WiFi LNA from 5 GHz to 5.9 GHz:.
• input third-order intercept point (IP3i) = 15 dBm.
• input power at 1 dB gain compression (Pi(1dB)) = 0 dBm See.