BFU730F Overview
Key Features
- Low noise high gain microwave transistor Noise figure (NF) = 0.8 dB at 5.8 GHz High maximum power gain 18.5 dB at 5.8 GHz 110 GHz fT silicon germanium technology
- 2nd LNA stage and mixer stage in DBS LNB’s Low noise amplifiers for microwave communications systems Ka band oscillators DRO’s Low current battery equipped applications Microwave driver / buffer applications Wi-Fi / WLAN / WiMAX GPS RKE AMR ZigBee LTE, cellular, UMTS SDARS first stage LNA FM radio Mobile TV Bluetooth
