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BFU730F

Manufacturer: NXP Semiconductors

BFU730F datasheet by NXP Semiconductors.

BFU730F datasheet preview

BFU730F Datasheet Details

Part number BFU730F
Datasheet BFU730F_NXPSemiconductors.pdf
File Size 154.24 KB
Manufacturer NXP Semiconductors
Description wideband silicon germanium RF transistor
BFU730F page 2 BFU730F page 3

BFU730F Overview

NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices.

BFU730F Key Features

  • Low noise high gain microwave transistor Noise figure (NF) = 0.8 dB at 5.8 GHz High maximum power gain 18.5 dB at 5.8 GH

BFU730LX from other manufacturers

View BFU730LX datasheet index

Brand Logo Part Number Description Other Manufacturers
NXP Logo BFU730LX NPN wideband silicon germanium RF transistor NXP
NXP Semiconductors logo - Manufacturer

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BFU730F Distributor

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