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BFU730F Datasheet Wideband Silicon Germanium Rf Transistor

Manufacturer: NXP Semiconductors

Overview: BFU730F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.

General Description

NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

CAUTION This device is sensitive to ElectroStatic Discharge (ESD).

Observe precautions for handling electrostatic sensitive devices.

Key Features

  • Low noise high gain microwave transistor Noise figure (NF) = 0.8 dB at 5.8 GHz High maximum power gain 18.5 dB at 5.8 GHz 110 GHz fT silicon germanium technology 1.3.

BFU730F Distributor