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BLL6H1214-500 - LDMOS L-band radar power transistor

Datasheet Summary

Description

500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.

Table 1.

Test information Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 150 mA; in a class-AB production test circuit.

Features

  • Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 50 V, an IDq of 150 mA, a tp of 300 μs with δ of 10 %: ‹ Output power = 500 W ‹ Power gain = 17 dB ‹ Efficiency = 50 %.
  • Easy power control.
  • Integrated ESD protection.
  • High flexibility with respect to pulse formats.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (1.2 GHz to 1.4 GHz).

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Datasheet Details

Part number BLL6H1214-500
Manufacturer NXP Semiconductors
File Size 227.88 KB
Description LDMOS L-band radar power transistor
Datasheet download datasheet BLL6H1214-500 Datasheet
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BLL6H1214-500 LDMOS L-band radar power transistor Rev. 02 — 1 April 2010 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 150 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 1.2 to 1.4 VDS (V) 50 PL (W) 500 Gp (dB) 17 ηD (%) 50 tr (ns) 20 tf (ns) 6 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits „ Typical pulsed RF performance at a frequency of 1.2 GHz to 1.
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