BLL6H1214-500 Datasheet Ldmos L-band Radar Power Transistor

Manufacturer: NXP Semiconductors

Overview: BLL6H1214-500 LDMOS L-band radar power transistor Rev. 02 — 1 April 2010 .. Product data sheet 1. Product profile 1.

Datasheet Details

Part number	BLL6H1214-500
Manufacturer	NXP Semiconductors
File Size	227.88 KB
Description	LDMOS L-band radar power transistor
Datasheet	BLL6H1214-500_NXPSemiconductors.pdf

500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.

Table 1.

Test information Typical RF performance at Tcase = 25 °C;

Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 50 V, an IDq of 150 mA, a tp of 300 μs with δ of 10 %: Output power = 500 W Power gain = 17 dB Efficiency = 50 %.
Easy power control.
Integrated ESD protection.
High flexibility with respect to pulse formats.
Excellent ruggedness.
High efficiency.
Excellent thermal stability.
Designed for broadband operation (1.2 GHz to 1.4 GHz).

Brand Logo	Part Number	Description	Manufacturer
	BLL6H1214-500	LDMOS L-band radar power transistor	Ampleon

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