BLL6H1214-500
BLL6H1214-500 is LDMOS L-band radar power transistor manufactured by NXP Semiconductors.
LDMOS L-band radar power transistor
Rev. 02
- 1 April 2010
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Product data sheet
1. Product profile
1.1 General description
500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.
Table 1. Test information Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 150 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 1.2 to 1.4 VDS (V) 50 PL (W) 500 Gp (dB) 17 ηD (%) 50 tr (ns) 20 tf (ns) 6
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features and benefits
- Typical pulsed RF...
