BLS6G2731-6G
description
6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range.
Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 100 µs; δ = 10 %; IDq = 25 m A; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 2.7 to 3.1 VDS (V) 32 PL (W) 6 Gp (d B) 15 ηD (%) 33 tr (ns) 20 tf (ns) 10
CAUTION This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
I Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 25 m A, a tp of 100 µs and a δ of 10 %: N Output power = 6 W N Power gain = 15 d B N Efficiency = 33 % I Integrated ESD protection I High flexibility with respect to pulse formats I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (2.7 GHz to 3.1 GHz) I Internally matched for ease of use I pliant to Directive 2002/95/EC, regarding...
