BLS6G2731-6G datasheet by NXP Semiconductors.
| Part number | BLS6G2731-6G |
|---|---|
| Datasheet | BLS6G2731-6G_NXPSemiconductors.pdf |
| File Size | 98.83 KB |
| Manufacturer | NXP Semiconductors |
| Description | LDMOS S-Band radar power transistor |
|
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6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Typical performance Typical RF performance at Tcase = 25 °C; in a class-AB production test circuit.
View BLS6G2731-6G datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BLS6G2731-6G | LDMOS S-Band radar power transistor | Ampleon |
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