BLS6G2731-6G - LDMOS S-Band radar power transistor

6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range.

Table 1.

Typical performance Typical RF performance at Tcase = 25 °C; tp = 100 µs; δ = 10 %; IDq = 25 mA; in a class-AB production test circuit.

• I Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 25 mA, a tp of 100 µs and a δ of 10 %: N Output power = 6 W N Power gain = 15 dB N Efficiency = 33 % I Integrated ESD protection I High flexibility with respect to pulse formats I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (2.7 GHz to 3.1 GHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding restrict.