BLS6G2731-6G Description
6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Typical performance Typical RF performance at Tcase = 25 °C; in a class-AB production test circuit.
- Part: BLS6G2731-6G
- Manufacturer: NXP Semiconductors
- Size: 98.83 KB
Similar Part Number
| Manufacturer | Part Number | Description |
|---|---|---|
Ampleon |
BLS6G2731-6G | LDMOS S-Band radar power transistor |