BLS6G2731-6G Datasheet Ldmos S-band Radar Power Transistor

Manufacturer: NXP Semiconductors

Overview: BLS6G2731-6G LDMOS S-Band radar power transistor Rev. 01 — 19 February 2009 .. Product data sheet 1. Product proﬁle 1.

Datasheet Details

Part number	BLS6G2731-6G
Manufacturer	NXP Semiconductors
File Size	98.83 KB
Description	LDMOS S-Band radar power transistor
Datasheet	BLS6G2731-6G_NXPSemiconductors.pdf

6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range.

Table 1.

Typical performance Typical RF performance at Tcase = 25 °C;

I Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 25 mA, a tp of 100 µs and a δ of 10 %: N Output power = 6 W N Power gain = 15 dB N Efﬁciency = 33 % I Integrated ESD protection I High ﬂexibility with respect to pulse formats I Excellent ruggedness I High efﬁciency I Excellent thermal stability I Designed for broadband operation (2.7 GHz to 3.1 GHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding restrict.

Brand Logo	Part Number	Description	Other Manufacturers
	BLS6G2731-6G	LDMOS S-Band radar power transistor	Ampleon

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