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BLS6G3135-120 - LDMOS S-Band radar power transistor

Description

120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.

Table 1.

Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit.

Features

  • I Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of up to 300 µs with δ of 10 %: N Output power = 120 W N Gain = 11 dB N Efficiency = 43 % I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (3.1 GHz to 3.5 GHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding restriction of hazardous substanc.

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Datasheet Details

Part number BLS6G3135-120
Manufacturer NXP Semiconductors
File Size 106.19 KB
Description LDMOS S-Band radar power transistor
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www.DataSheet4U.com BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor Rev. 01 — 14 August 2007 Preliminary data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 3.1 to 3.5 VDS (V) 32 PL (W) 120 Gp (dB) 11 ηD (%) 43 tr (ns) 20 tf (ns) 6 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical pulsed RF performance at a frequency of 3.1 GHz to 3.
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