BLS6G3135-120 Description
120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Typical performance Typical RF performance at Tcase = 25 °C; in a class-AB production test circuit.
- Part: BLS6G3135-120
- Manufacturer: NXP Semiconductors
- Size: 106.19 KB
Similar Part Number
| Manufacturer | Part Number | Description |
|---|---|---|
Ampleon |
BLS6G3135-120 | LDMOS S-Band radar power transistor |