BLS6G3135-120 datasheet by NXP Semiconductors.
| Part number | BLS6G3135-120 |
|---|---|
| Datasheet | BLS6G3135-120_NXPSemiconductors.pdf |
| File Size | 106.19 KB |
| Manufacturer | NXP Semiconductors |
| Description | LDMOS S-Band radar power transistor |
|
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120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Typical performance Typical RF performance at Tcase = 25 °C; in a class-AB production test circuit.
View BLS6G3135-120 datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BLS6G3135-120 | LDMOS S-Band radar power transistor | Ampleon |
View all NXP Semiconductors datasheets
| Part Number | Description |
|---|---|
| BLS6G3135-20 | LDMOS S-Band radar power transistor |
| BLS6G3135S-120 | LDMOS S-Band radar power transistor |
| BLS6G3135S-20 | LDMOS S-Band radar power transistor |
| BLS6G2731-6G | LDMOS S-Band radar power transistor |
| BLS6G2933S-130 | LDMOS S-band radar power transistor |
